View IRF7420PBF_8722348.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

parameter max. units v ds drain- source voltage -12 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -11.5 i d @ t a = 70c continuous drain current, v gs @ -4.5v -9.2 a i dm pulsed drain current -46 p d @t a = 25c power dissipation 2.5 p d @t a = 70c power dissipation 1.6 linear derating factor 20 mw/c v gs gate-to-source voltage 8 v t j, t stg junction and storage temperature range -55 to +150 c 8/25/06 www.irf.com 1 IRF7420PBF hexfet power mosfet these p-channel hexfet power mosfets from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications.. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infrared, or wave soldering technique description ultra low on-resistance p-channel mosfet surface mount available in tape & reel lead-free
parameter max. units r ja maximum junction-to-ambient 50 c/w thermal resistance
top view 8 1 2 3 4 5 6 7 d d d g s a d s s so-8 v dss r ds(on) max i d -12v 14m ? @v gs = -4.5v - 11.5a 17.5m ? @v gs = -2.5v - 9.8a 26m ? @v gs = -1.8v - 8.1a
2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -2.5a, v gs = 0v t rr reverse recovery time ??? 62 93 ns t j = 25c, i f = -2.5a q rr reverse recovery charge ??? 61 92 c di/dt = -100a/s source-drain ratings and characteristics 46 2.5 s d g repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle electrical characteristics @ t j = 25c (unless otherwise specified) surface mounted on 1 in square cu board, t 10sec. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -12 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.007 ??? v/c reference to 25c, i d = -1ma ??? ??? 14 v gs = -4.5v, i d = -11.5a ??? 17.5 v gs = -2.5v, i d = -9.8a ??? 26 v gs = -1.8v, i d = -8.1a v gs(th) gate threshold voltage -0.4 ??? -0.9 v v ds = v gs , i d = -250a g fs forward transconductance 32 ??? ??? s v ds = -10v, i d = -11.5a ??? ??? -1.0 v ds = -9.6v, v gs = 0v ??? ??? -25 v ds = -9.6v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -8v gate-to-source reverse leakage ??? ??? 100 v gs = 8v q g total gate charge ??? 38 ??? i d = -11.5a q gs gate-to-source charge ??? 8.1 ??? nc v ds = -6v q gd gate-to-drain ("miller") charge ??? 8.7 ??? v gs = -4.5v t d(on) turn-on delay time ??? 8.8 13 v dd = -6v, v gs = -4.5v t r rise time ??? 8.8 13 i d = -1.0a t d(off) turn-off delay time ??? 291 437 r d = 6 ? t f fall time ??? 225 338 r g = 6 ? c iss input capacitance ??? 3529 ??? v gs = 0v c oss output capacitance ??? 1013 ??? pf v ds = -10v c rss reverse transfer capacitance ??? 656 ??? ? = 1.0mhz i gss a m ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -11.5a 0.1 1 10 100 0.5 1.0 1.5 2.0 2.5 v = -10v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -1.0v 20s pulse width tj = 25c vgs top -7.0v -5.0v -4.5v -2.5v -1.8v -1.5v -1.2v bottom -1.0v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -1.0v 20s pulse width tj = 150c vgs top -7.0v -5.0v -4.5v -2.5v -1.8v -1.5v -1.2v bottom -1.0v
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 10 20 30 40 50 0 1 2 3 4 5 6 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -11.5a v = -6v ds v = -9.6v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 1 10 100 -v ds , drain-to-source voltage (v) 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 3 6 9 12 t , case temperature ( c) -i , drain current (a) c d
1 0.1 %

+ - v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms
6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v d s i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 0.0 2.0 4.0 6.0 8.0 -v gs, gate -to -source voltage (v) 0.005 0.010 0.015 0.020 0.025 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -11.5a 0.0 10.0 20.0 30.0 40.0 50.0 -id , drain current ( a ) 0 0.02 0.04 0.06 0.08 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = -2.5v v gs = -1.8v v gs = -4.5v
www.irf.com 7 fig 15. typical vgs(th) vs. junction temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 - v g s ( t h ) ( v ) i d = -250a fig 16 typical power vs. time 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 time (sec) 0 50 100 150 200 250 300 350 400 p o w e r ( w )
8 www.irf.com so-8 package outline dimensions are shown in milimeters (inches)

! "## $% $

$ $ &

so-8 part marking information (lead-free)

www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information.08/2006 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters(inches). 3 . outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in milimeters (inches)

▲Up To Search▲

Price & Availability of IRF7420PBF

	To Download IRF7420PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .